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I3XTY > TUTTI 14.06.09 11:10l 392 Lines 18037 Bytes #999 (0) @ ITA
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Subj: MSG n. 14 di I3ZJV
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Sent: 090614/1159 @:I3XTY.TV.IVEN.ITA.EU $:40437_I3XTY Sally 4.1.232
Date: dom, 14 giu 2009 11:59:11 LT
From: I3XTY (Luigi)
To: TUTTI@ITA
Subject: MSG n. 14 di I3ZJV
Inviato da: I3XTY@I3XTY.TV.IVEN.ITA.EU
From: I3ZJV@I3XTY.TV.IVEN.ITA.EU
To : TUTTI@ITA
From: DO9HK @ DB0FBB.#NRW.DEU.EU
To: TECHNIK @ WW
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RF Power Transistors Information
RF Power Transistors are transistors which are designed to handle high power
RF signals (i.e. Stereo amplifiers, radio transmitters,etc.). Some things to
look for in identifying these
types of transistors are:
1.Large heatsinks that can dissipate heat away from the transistor, or a transistor
casing that is made to dissipate heat.
2.Any kind of sheilding around the transistor.
3.The most important part of any device identification is the Part number or
the manufacturers number.
RF Power Transistors
1.5 to 30 MHz, HF SSB/CW
Output Input Typ Supply
Power Power Gain Voltage
Device (W) (W) (dB) (V) Case Mfr
2SC2086 0.3 - 13 12 TO-92 MI
BLV10 1 - 18 12 SOT123 PH
BLV11 2 - 18 12 SOT123 PH
MRF476 3 0.1 15 12.5-13.6 221A-04/1 MO
BLW87 6 - 18 12 SOT123 PH
2SC2166 6 - 13.8 12 TO-220 MI
BLW83 10 - 20 26 SOT123 PH
MRF475 12 1.2 10 12.5-13.6 221A-04/1 MO
MRF433 12.5 0.125 20 12.5-13.6 211-07/1 MO
2SC3133 13 - 14 12 TO-220 MI
MRF485 15 1.5 10 28 221A-04/1 MO
2SC1969 16 - 12 12 TO-220 MI
BLW50F 16 - 19.5 45 SOT123 PH
MRF406 20 1.25 12 12.5-13.6 211-07/1 MO
SD1285 20 0.65 15 12.5 M113 SG
MRF426 25 0.16 22 28 211-07/1 MO
MRF427 25 0.4 18 50 211-07/1 MO
MRF497/MRF477 40 1.25 15 12.5-13.6 211-11/1 MO
MRF466 40 1.25 15 28 211-07/1 MO
BLW96 50 - 19 40 SOT121 PH
2SC3241 75 - 12.3 12.5 TO-45E MI
SD1405 75 3.8 13 12.5 M174 SG
2SC3241 75 - 12.3 13.5 TO-40E MI
MRF464 80 2.53 10 28 211-11/1 MO
MRF421 100 10 10 12.5-13.6 211-11/1 MO
SD1405 100 7.9 11 12.5 M174 SG
2SC2904 100 - 11.5 12.5 TO-40E MI
SD1729 130 8.2 12 28 M174 SG
MRF422 150 15 10 28 211-11/1 MO
MRF428 150 7.5 13 50 211-11/1 MO
SD1726 150 6 14 50 M174 SG
PT9790 150 4.8 15 50 211-11/1 MO
MRF448 250 15.7 12 50 211-11/1 MO
MRF430 600 60 10 50 368-02/1 MO
RF Power Transistors
50 MHz
Output Input Typ Supply
Power Power Gain Voltage
Device (W) (W) (dB) (V) Case Mfr
MRF475 4 0.4 10 12.5-13.6 211A-04/1 MO
MRF497 40 4 10 12.5-13.6 211A-04/1 MO
SD1446 70 7 10 12.5 M113 SG
MRF492 70 5.6 11 12.5-13.6 211-11/1 MO
SD1405 100 20 7 12.5 M174 SG
RF Power Transistors
VHF to 175 MHz
Output Input Typ Supply
Power Power Gain Voltage
Device (W) (W) (dB) (V) Case Mfr
2N4427 0.7 - 8 7.5 TO-39 PH
2N3866 1 - 10 28 TO-39 PH
BFQ42 1.5 - 8.4 7.5 TO-39 PH
2SC2056 1.6 - 9 7.2 TO-41 MI
2N3553 2.5 0.25 10 28 79-04/1 MO
BFQ43 3 - 9.4 7.5 TO-39 PH
SD1446 4 0.25 12 12.5 M135 SG
2SC2056 5 - 13 12.5 T-40 MI
2N6541 7 1 8.4 28 144B-05/1 MO
MRF340 8 0.4 13 28 221A-04/2 MO
BLW29 9 - 7.4 7.5 SOT120 PH
SD1143 10 1 10 12.5 M135 SG
2SC1729 14 - 10 13.5 T-31E MI
SD1014-02 15 3.5 6.3 12.5 M135 SG
BLV11 15 - 8 13.5 SOT123 PH
2N6542 20 3 8.2 28 145A-09/1 MO
MRF342 24 1.9 11 28 221A-04/2 MO
BLW87 25 - 6 13.5 SOT123 PH
2SC1946 28 - 6.7 13.5 T-31E MI
MRF314 30 3 10 28 221-07/1 MO
SD1018 40 14 4.5 12.5 M135 SG
2N5643 40 6.9 7.6 28 145A-09/1 MO
BLW40 40 - 10 12.5 SOT120 PH
MRF315 45 5.7 9 28 221-07/1 MO
TP9733 50 10 7 28 145A-09/1 MO
MRF344 60 15 6 28 221A-04/2 MO
2SC2964 70 - 6.7 12.5 T-40 MI
BLV75/12 75 - 6.5 12.5 SOT119 PH
MRF316 80 8 10 28 316-01/1 MO
SD1477 100 25 6 12.5 M111 SG
BLW78 100 - 6 28 SOT121 PH
MRF316 100 12.5 9 28 316-01/1 MO
TP9386 150 15 10 28 316-01/1 MO
RF Power Transistors
220 MHz
Output Input Typ Supply
Power Power Gain Voltage
Device (W) (W) (dB) (V) Case Mfr
MRF207 1 0.15 8.2 12.5 79-04/1 MO
MRF227 3 0.13 13.5 12.5 79-05/5 MO
MRF208 10 1 10 12.5 145A-09/1 MO
MRF226 13 1.6 9 12.5 145A-09/1 MO
2SC2133 30 - 8.2 28 T-40E MI
2SC2134 60 - 7 28 T-40E MI
2SC2609 100 - 6 28 T-40E MI
RF Power Transistors
UHF to 512 MHz
Output Input Typ Supply
Power Power Gain Voltage
Device (W) (W) (dB) (V) Case Mfr
2N4427 0.4 - 10 12.5 TO-39 PH
2SC2133 0.5 - 14 12.5 T-43 MI
MRF581 0.6 0.03 13 12.5 317-01/2 MO
2SC2133 1 - 4 12.5 TO-39 MI
2N3866 1 - 10 28 TO-39 PH
2SC2133 1.4 - 6.7 13.5 TO-39 MI
BLX65E 2 - 9 12.5 TO-39 PH
BLW89 2 - 12 28 SOT122 PH
MRF630 3 0.33 9.5 12.5 79-05/5 MO
2SC2133 3 0.3 10 12.5 TO-31E MI
BLW80 4 - 8 12.5 SOT122 PH
BLW90 4 - 11 12.5 SOT122 PH
MRF652 5 0.5 10 12.5 244-04/1 MO
2SC3021 7 1.2 7.6 12.5 TO-31E MI
BLW81 10 - 6 12.5 SOT122 PH
MRF653 10 2 7 12.5 244-04/1 MO
BLW90 10 - 9 28 SOT122 PH
MRF654 15 2.5 7.8 12.5 244-04/1 MO
2SC3022 18 6 4.7 12.5 TO-31E MI
BLU20/12 20 - 6.5 12.5 SOT119 PH
BLX94A 25 - 6 28 SOT48/2 PH
2SC2695 28 - 4.9 13.5 TO-31E MI
BLU30/12 30 - 6 12.5 SOT119 PH
BLU45/12 45 - 4.8 12.5 SOT119 PH
2SC2905 45 - 4.8 12.5 TO-40E MI
MRF650 15 15.8 5 12.5 316-01/1 MO
TP5051 50 6 9 24 333A-02/2 MO
BLU60/12 60 - 4.4 12.5 SOT119 PH
2SC3102 60 20 4.8 12.5 TO-41E MI
BLU60/28 60 - 7 28 SOT119 PH
MRF658 65 25 4.15 12.5 316-01/1 MO
MRF338 80 15 7.3 28 333-04/1 MO
SD1464 100 28.2 5.5 28 M168 SG
RF Power Transistors
UHF to 960 MHz
Output Input Typ Supply
Power Power Gain Voltage
Device (W) (W) (dB) (V) Case Mfr
MRF581 0.6 0.06 10 12.5 317-01/2 MO
MRF8372 0.75 0.11 8 12.5 751-04/1 MO
MRF557 1.5 0.23 8 12.5 317D-02/2 MO
BLV99 2 - 9 24 SOT172 PH
SD1420 2.1 0.27 9 24 M122 SG
MRF839 3 0.46 8 12.5 305A-01/1 MO
MRF896 3 0.3 10 24 305-01/1 MO
MRF891 5 0.63 9 24 319-06/2 MO
2SC2932 6 - 7.8 12.5 TO-31E MI
SD1398 6 0.6 10 24 M142 SG
2SC2933 14 3 6.7 12.5 TO-31B MI
SD1400-03 14 1.6 9.5 24 M118 SG
MRF873 15 3 7 12.5 319-06/2 MO
SD1495-03 30 6 7 24 M142 SG
SD1424 30 5.3 7.5 24 M156 SG
MRF897 30 3 10 24 315B-01/1 MO
MRF847 45 16 4.5 12.5 319-06/1 MO
BLV101A 50 - 8.5 26 SOT273 PH
SD1496-03 55 10 7.4 24 M142 SG
MRF898 60 12 7 24 333A-02/1 MO
MRF880 90 12.7 8.5 26 375A-01/1 MO
MRF899 150 24 8 26 375A-01/1 MO
Device Nomenclature
The Part number is an essential part of the device identification process.
Depending on where
the parts are made the part numbers will mean something different.
For example, The European nomencalature is different fron the Japanese nomenclature
which is different from the North American nomenclature. Parts of each of these nomenclatures
means something different. They represent information that is
important to the way the device is used. For example, what matierial the device is
made out of, applications it can be used for, and a series of number that
distinguish that part from all others so one can find device specifications
and parts that may be compatible with the part that is being looked up.
European Semiconductor Numbering System
BFR90
|| Third, Fourth, Fith Character(Serial Code)
|| Y## Industrial service (No letter Z)
|| ## is a W## Registration number from 10_99
|| 100- Device for consumer or entertainment
|| 999 use.
||
||
First letter---||----Second Leter(Type)]
(Material)
A Germanium A Low Power diode,
voltage-variable capacitor
B Silicon B Varicap
C Compound Materials C Small-signal audio transistor
such as cadmium
sulfide or gallium
arsenide used in
semiconductor devices.
(energy gap band of
1.3 or more eV.)
D Materials with an D Audio power transistor
energy gap of less
than 0.6 eV such as
Indium antimonide.
R Radiation detectors, E tunnel diode
photo-conductive cells,
Hall-effect generators
and so on
F Small-signal RF transistor
G Miscellaneous
H Field Probe
K Hall Generator
L RF-Power transistor
M Hall modulators and multipliers
P Photo diode, photo-resistor
photo-conductive cell(LDR),
Radiation device.
R Low-power controlled rectifier
S Low-power switching transistor
T Breakdown devices,high-power
controlled rectifier,Schottky
diode, Thyristor,pnpn diodes.
U High-powered switching transistor
X Multiplier diode
Y High-power rectifier(diode)
Z Zener diode
Japanese Nomenclature
i ii iii iv v
2 S C 82D A
i) Kind of device, indicating the number of effective
electrical connections minus one.
ii) For a semiconductor registered with the EIAJ this
letter is always an S.
iii) Third letter designates the polarity and application
as follows:
A PNP transistor, high-frequency
B PNP transistor, low-frequency
C NPN transistor, high-frequency
D NPN transistor, low-frequency
E P-gate thyristor
F N-gate thyristor
H N-base unijunction transistor
J P-channel FET
K N-channel FET
M Bi-directional triode thyristor
iv) These figures designate the order of application
for EIAj registration, starting with 11.
v) This letter indicates the level of improvement.
An improved device may be used in place of
a previous-generation device , but not necessarily
the other way around.
Update ? send Mail to : DO9HK @ DB0FBB.#NRW.DEU.EU
E-Mail : DO9HK@GMX.DE
vy73 Holger DO9HK
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73 a tutti de Luigi.
li, dom 14 giugno 2009 11:57 LT (+2.00 UTC)
I3XTY Paese, Veneto
BBS I3XTY@I3XTY.TV.IVEN.ITA.EU
e_mail i3xty@yahoo.it
http://
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